| 摘要 |
PURPOSE: A structure and a method for forming a shielded gate trench an FET with an inter-electrode dielectric having a low-k dielectric therein are provided to increase the thickness of an effective oxide film by including low-K dielectric. CONSTITUTION: A shield-type gate trench FET comprises a trench(400), a shield electrode(414), and a dielectric(432), a gate electrode(428), and a dielectric between electrodes. The trenches are expanded to inside of a semiconductor region(401). The shield electrode is arranged in a lower part of each trench. A shield dielectric(416) is insulated from the semiconductor domain through a shield dielectric. The gate electrode is arranged on the shield electrode. The dielectric between electrodes is expanded the center of the shield electrode and gate electrode. |
