发明名称 Nano wires and method of manufacturing the same
摘要 Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
申请公布号 US7649192(B2) 申请公布日期 2010.01.19
申请号 US20060369859 申请日期 2006.03.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI BYOUNG-LYONG;LEE EUN-KYUNG
分类号 H01L29/06 主分类号 H01L29/06
代理机构 代理人
主权项
地址