| 摘要 |
PURPOSE: A trench formation method of a semiconductor device is provided to improve uniformity of trench depth by etching a trench regardless of the position of a trench formed on the wafer and the size of the trench. CONSTITUTION: A hard mask layer(110) defining a trench region is formed on a semiconductor substrate(100). An ion injection region(130) is formed by injecting impurity ion into a semiconductor substrate region exposed by the hard mask layer. The ion injection region is annealing-processed. An ion injection area is removed and a trench is formed by etching a hard mask layer using an etching mask.
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