| 摘要 |
PURPOSE: A semiconductor memory device and a method of manufacture thereof are provided to reduce exposure area of an element isolation film by using a hard mask pattern of a line shape to form a contact hole for a landing plug. CONSTITUTION: A semiconductor memory device comprises a semiconductor substrate(300), a landing plug, an inter-layer insulating film, and a contact plug. An element isolation film(302) and an active area are formed in the semiconductor substrate. The landing plug is formed on the upper part of the active area. The inter-layer insulating film is formed on the upper part of the element isolation film. The contact plug is formed on a part of the inter-layer insulating film and the landing plug.
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