| 摘要 |
<p>PURPOSE: A polysilicon thin film transistor and a manufacturing method thereof are provided to improve the production yield by performing patterning of the protective film, a gate insulating film, and a semiconductor layer collectively with the SF6 and Ar in the source and drain formation step. CONSTITUTION: A channel layer(142a) is corresponded to the channel region(C) on the buffer layer(120). A first and second doping layers(142b,142c) are respectively corresponded to the both sides of the channel region in source and drain region(S,D). A gate insulating film(145) is located on the semiconductor layer(142). A protective film(155) covers the gate electrode(125). In the source and drain hole(SH,DH), the protective film, the gate insulating film, and the buffer layer are patterned in the first width. The first and second doped layers are patterned to the second width narrower than the first width.</p> |
