| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a backside bonding type solar cell which suppresses short-circuiting of an amorphous semiconductor layer formed on the backside of a semiconductor substrate, and to provide a method for manufacturing the same. <P>SOLUTION: In the solar cell 10, an i-type amorphous semiconductor layer 12 includes an exposed portion 12A which is exposed in plan view and a coating portion 12B covered with a p-type amorphous semiconductor layer 13 and an n-type amorphous semiconductor layer 14. In an orthogonal direction orthogonal to the backside of the semiconductor substrate 11, a first thickness T<SB>1</SB>that the exposed portion 12A has is less than a second thickness T<SB>2</SB>that the coating portion 12B has. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
