| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of depositing a metal oxide insulating film by which leakage current density can be reduced and device characteristics and reliability can be improved in the deposition of the insulating film for a nonvolatile semiconductor memory element. Ž<P>SOLUTION: A noble gas having an atomic weight above Kr is introduced, and a metal oxide target containing a metal element which is heavier than the introduced noble gas is used to form, by sputtering, the metal oxide insulating film containing a metal element of La, Hf, etc., heavier than the introduced noble gas like LaHfO, LaAlO, and ZrAlO. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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