| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means for analyzing easily with high sensitivity, metal contamination of a silicon wafer surface. Ž<P>SOLUTION: In a method, while being cooled, a silicon wafer 3 with an oxide film is brought into contact with hydrogen fluoride gas, and hereby condensation (not including a silicon oxide component) is generated on a wafer surface, to thereby etch an oxide film on the silicon wafer surface. In a metal contamination analysis method of the silicon wafer with the oxide film, the oxide film on the silicon wafer surface is etched and removed by the method, and scanning is performed with a solution along the silicon wafer surface after removal of the oxide film, and then a metal component in the solution is analyzed. In a method of manufacturing the silicon wafer, the metal contamination analysis method is used. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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