| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which an alloy layer is not formed between a gold electrode and a solder bump electrode. <P>SOLUTION: In the method of manufacturing the semiconductor device, a diffusion blocking layer of solder, and a bump electrode composed of solder are formed on an electrode at least whose surface is made of gold. An electrode whose surface is made of gold is formed on a semiconductor substrate, and a part of the semiconductor substrate surface around the electrode is exposed. Then, metal composing the diffusion blocking layer is subjected to an electroless plating. At this point, the semiconductor substrate surface exposed around the electrode is covered. Then, the bump electrode composed of solder is formed on the diffusion blocking layer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
