发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which has excellent heat radiating properties and which can reduce a mounting cost. SOLUTION: A semiconductor device 1 includes: a seal 2 of an insulating resin; a semiconductor chip 9 which is located in the seal, includes a gate electrode and a source electrode on a first principal plane, and has a back electrode (drain electrode) on a second principal plane; a drain electrode plate 3a which is shaped to have a gull wing-shape projection toward an end of the seal, has an upper plane exposed from the seal, and has a lower plane connected to the back electrode by an adhesive; a gate electrode plate 4a which is shaped to have a gull wing-shape projection toward the other end of the seal and which is connected to the gate electrode in the seal; a source electrode plate which is shaped to have a gull wing-shape projection toward the other end of the seal and which is connected to the source electrode in the seal; recesses 3d, 3e which are formed in the surface of the drain electrode plate located in the seal, and in which resin for forming the seal is filled; and a projection part 3f which is formed in the surface of the drain electrode plate located in the seal, and which meshes with the seal. The drain electrode plate and the source electrode plate branches off, and the lead portion provides a surface mounting terminal having a gull wing-shape. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010010696(A) 申请公布日期 2010.01.14
申请号 JP20090193761 申请日期 2009.08.25
申请人 RENESAS TECHNOLOGY CORP 发明人 HATA TOSHIYUKI;OTANI TAKESHI;SHIMIZU KAZUO
分类号 H01L23/48;H01L23/50 主分类号 H01L23/48
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