| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a phase shift mask achieving compatibility between thinning of an etching mask layer required for the generation of a 32 to 22 nm half pitch (hp) and securing latitude of the optical density design of a shielding zone. <P>SOLUTION: A phase shift part is an engraved part engraved from the surface of a light transmitting substrate to an engraved depth that induces a predetermined phase difference. The surface of the light transmitting substrate to be engraved has an etching mask film 10 made of a material that is substantially dry etched by a chlorine-based gas but substantially not dry etched by a fluorine-based gas and that functions as an etching mask upon forming an engraved part at least until the etching process reaches the engraved depth. On the opposite surface of the light transmitting substrate, a light shielding film 20 is provided, for forming a light shielding part (shielding zone) to block exposure light transmitting through the light transmitting substrate in an area out of the transfer pattern area due to etching. <P>COPYRIGHT: (C)2010,JPO&INPIT |
