| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device which can improve a breakdown voltage, and to provide a method of manufacturing the light-emitting device. <P>SOLUTION: The method of manufacturing the light-emitting device includes a preparation step, a wiring pattern forming step, a plating step, a removing step, and a light-emitting element mounting step. In the preparation step, a metal substrate 102 having an insulating layer 103 formed on one surface is prepared, wherein the insulating layer 103 is in contact with at least an end side of the metal substrate. In the wiring pattern forming step, a wiring pattern 104 of which one end extends to the end side of the insulating layer 103 is formed on a surface opposite to the metal substrate 102 of the insulating layer 103. In the plating step, plating metal is formed on a surface of the wiring pattern 104 by an electrolytic plating method. In the removing step, one end side of the wiring pattern 104 is removed so that a shortest distance from one end of the wiring pattern 104 to an end surface of the metal substrate 102 through a surface of the insulating layer 103 becomes longer than a thickness of the insulating layer 103. In the light-emitting element mounting step, the light-emitting element is mounted and the light-emitting element and the wiring pattern 104 are electrically connected. <P>COPYRIGHT: (C)2010,JPO&INPIT |
