| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device for preventing a column leak without requiring a transistor having a high gate breakdown voltage, and to provide a driving method of the device. <P>SOLUTION: This semiconductor storage device includes: a plurality of memory cell transistors MT arrayed in a matrix; a plurality of word lines WL for connecting control gates of the plurality of memory cell transistors MT in common existing in the same row; a plurality of source lines SL for connecting sources of the plurality of memory cell transistors MT in common existing in the same row; a plurality of bit lines BL for connecting drains of the plurality of memory cell transistors MT in common existing in the same column; first transistors T1, in which the drains are connected to source lines SL; second transistors T2, in which the drains are connected to sources of the first transistors T1, gates are connected to the word lines WL, and the sources are grounded; and a control line CL for connecting the gates of the plurality of first transistors T1 in common. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
