发明名称 |
NANOSCALE MULTI-JUNCTION QUANTUM DOT DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern.
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申请公布号 |
US2010006821(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
US20070444956 |
申请日期 |
2007.10.08 |
申请人 |
CHUNGBUK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION |
发明人 |
CHOI JUNG BUM;LEE JONG JIN;SHIN SEUNG-JUN;CHUNG RAE-SIK |
分类号 |
H01L29/66;H01L21/336 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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