发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a means capable of repeatedly using a support substrate when manufacturing a semiconductor device using the support substrate and capable of removing the support substrate in a short time without causing any trouble in a wiring layer and the like constituting the semiconductor device, thereby manufacturing the semiconductor device easily in a short time. <P>SOLUTION: A semiconductor device 30 is obtained by: forming a resin layer 12 composed of a thermoplastic resin on a support substrate 11; forming an insulating layers 13 and 15 and wiring layers 14 and 16 in order; performing a step of form interlayer connectors 17 and 18 by penetrating the insulating layers and electrically conducting the wiring layers; performing the step of mount semiconductor chips 23 and 24 on the wiring layers, heating the resin layer; relatively shifting the support substrate and the insulating layers in a parallel and a perpendicular directions to shear the resin layer; and separating the support substrate and the insulating layers. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010010644(A) 申请公布日期 2010.01.14
申请号 JP20080280132 申请日期 2008.10.30
申请人 TOSHIBA CORP 发明人 SATO TAKAO;HONMA SOICHI;SHIMA SHINYA
分类号 H01L25/04;H01L23/12;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/04
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