发明名称 LASER DICING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a laser dicing method which shortens working time and does not lower the efficiency. <P>SOLUTION: A first modification area 22 to be formed nearest to the surface among a plurality of modification areas formed by a laser is formed, the measurement of the surface shape of the wafer is simultaneously executed by measurement scan, and a modification area forming position is controlled on the basis of surface shape data obtained by the measurement scan when forming the modification areas 23, 24, 25 and 26 to be formed at a position deeper than the first modification area on the same cut line as the first modification area. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010010209(A) 申请公布日期 2010.01.14
申请号 JP20080164690 申请日期 2008.06.24
申请人 TOKYO SEIMITSU CO LTD 发明人 HIRANO TETSUYA
分类号 H01L21/301;B23K26/00;B23K101/40 主分类号 H01L21/301
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