| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the occupied area of an SRAM in a semiconductor device comprising the SRAM, and to provide its method for manufacturing. Ž<P>SOLUTION: The semiconductor device includes a silicon substrate 10 comprising a first region I in which SRAM is formed and a second region II, a first transistor TR<SB>n1</SB>of SRAM which is formed in the first region I and includes a first gate electrode 19a, and a second transistor TR<SB>n0</SB>which is formed in the second region II and includes a second gate electrode 19b. The height of the first gate electrode 19a is lower than that of the second electrode 19b. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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