CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME
摘要
<p>Memory devices including a carbon-based resistivity-switchable material, and methods of forming such memory devices are provided, the methods including introducing a processing gas into a processing chamber, wherein the processing gas includes a hydrocarbon compound and a carrier gas, and generating a plasma of the processing gas to deposit a layer of the carbon-based switchable material on a substrate within the processing chamber. Numerous additional aspects are provided.</p>
