发明名称 MICROWAVE PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a microwave plasma processing apparatus for further reducing damage to a substrate by microwave plasma. <P>SOLUTION: A microwave plasma processing apparatus 10 includes: a processing container 11 which maintains the interior thereof to a reduced pressure; a holding base 13 provided in the processing container 11 and which holds a substrate S; a gas supplying part 31 which supplied gas into the processing container 13; a microwave generator 24 which generates a microwave; a plasma introducing part 20 arranged opposite to the holding base 13 and introducing the microwave generated by the microwave generator 24 into the processing container 11; and a mesh plate 50 arranged between the plasma introducing part 20 and the holding base 13. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010010297(A) 申请公布日期 2010.01.14
申请号 JP20080166347 申请日期 2008.06.25
申请人 TOKYO ELECTRON LTD 发明人 TANAKA KOJI
分类号 H01L21/31;C23C16/511;H01L21/3065;H05H1/46 主分类号 H01L21/31
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