发明名称 |
RESIST COMPOSITION AND LITHOGRAPHIC PROCESS USING SAID COMPOSITION |
摘要 |
<p>Methods and compositions for enhancing the sensitivity of an inorganic resist composition are disclosed. In one aspect, compositions for use with a matrix material (e.g., a lithographically sensitive polymeric material such as a hydrogen-bearing siloxane material) can be formulated with a sensitizer, where the sensitizer can be present in a relatively small amount. The sensitizer can include a radical generator, and can act to enhance the efficiency of radical generation and/or resist crosslinking when the resist is impinged by a selected lithographic radiation. The methods of the present invention can be especially useful in performing short wavelength (e.g., less than 200 nm) lithography, or for processes such as e-beam lithography, which traditionally suffer from low throughput. Methods of utilizing one or more of these aspects are also disclosed.</p> |
申请公布号 |
WO2010005892(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
WO2009US49682 |
申请日期 |
2009.07.06 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;FEDYNYSHYN, THEODORE, H.;GOODMAN, RUSSELL, B. |
发明人 |
FEDYNYSHYN, THEODORE, H.;GOODMAN, RUSSELL, B. |
分类号 |
G03F7/075 |
主分类号 |
G03F7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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