METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF CORRECTING ETCHING WIDTH, SEMICONDUCTOR DEVICE, AND MOS TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a method of correcting etching width which reduce process irregularities and improve precision in semiconductor substrate processing to manufacture a semiconductor device with less irregularities. SOLUTION: A part of a silicon oxide film and a silicon substrate is etched using a silicon nitride film having an opening formed therein and a sidewall protective film covering the sidewall of the silicon nitride film as masks, to form an element isolating trench on the silicon substrate (S108). The sidewall protective film is made of the part of the oxide film formed by adjusting film thickness based on a measurement value of the width of an adjacent portion adjacent to the opening of the silicon nitride film. COPYRIGHT: (C)2010,JPO&INPIT