| 摘要 |
A semiconductor device fabrication method including the steps of: forming an interlayer insulating film on a substrate; forming an opening in the interlayer insulating film; forming an alloy layer containing manganese and copper to cover the inner surface of the opening; forming a first copper layer of a material containing primarily copper on the alloy layer to fill the opening; forming, on the first copper layer, a second copper layer of a material containing primarily copper and a higher concentration of oxygen, carbon or nitrogen than the first copper layer; heating the substrate on which the second copper layer has been formed; and removing the second copper layer.
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