METHODS OF DETECTING A SHIFT IN THE THRESHOLD VOLTAGE FOR A NONVOLATILE MEMORY CELL

摘要

A nonvolatile memory device is operated by programming sample data in the memory device for verification using verify voltage levels derived from an ideal verify voltage Vv associated with a particular temperature range, performing read verify operations on the sample data using the verify voltage Vv associated with the temperature range; and determining a temperature compensation parameter Nc based on results of the read verify operations.