The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
申请公布号
WO2009126827(A3)
申请公布日期
2010.01.14
申请号
WO2009US40105
申请日期
2009.04.09
申请人
APPLIED MATERIALS, INC.;FURUTA, GAKU;CHOI, YOUNG-JIN;CHOI, SOO YOUNG;PARK, BEOM, SOO;WHITE, JOHN, M.;ANWAR, SUHAIL;TINER, ROBIN, L.
发明人
FURUTA, GAKU;CHOI, YOUNG-JIN;CHOI, SOO YOUNG;PARK, BEOM, SOO;WHITE, JOHN, M.;ANWAR, SUHAIL;TINER, ROBIN, L.