Aminosilanes for shallow trench isolation films

摘要

A process is described for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon. The process comprises:
contacting a semiconductor substrate having high aspect ratio features with a liquid formulation comprising a low molecular weight aminosilane;
forming a film by spreading the liquid formulation over the semiconductor substrate;
heating the film at elevated temperatures under oxidative conditions.
Compositions for such processes are also described.