发明名称 |
Method of forming contact |
摘要 |
A substrate having at least two metal oxide semiconductor devices of a same conductive type and a gap formed between the two devices is provided. A first stress layer is formed over the substrate to cover the metal-oxide semiconductor devices and the substrate, filling the gap. An etching back process is then performed to remove a portion of the stress material layer inside the gap. A second stress layer and a dielectric layer are sequentially formed on the first stress layer. The first stress layer and the second stress layer provide a same type of stress. A portion of the second stress layer is removed to form a contact opening. A second conductive layer is filled into the contact opening to form a contact.
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申请公布号 |
US7645712(B2) |
申请公布日期 |
2010.01.12 |
申请号 |
US20080345670 |
申请日期 |
2008.12.30 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN NENG-KUO;TSAI TENG-CHUN;HUANG CHIEN-CHUNG |
分类号 |
H01L21/469;H01L21/338 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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