发明名称 |
CMOS image sensor and method for fabricating the same |
摘要 |
A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes: a semiconductor substrate of a first conductivity type having a photodiode region and a transistor region defined therein; a gate electrode formed above the transistor region of the semiconductor substrate with a gate insulating layer interposed therebetween; a first impurity region formed of the first conductivity type in the semiconductor substrate below the gate electrode and having a higher concentration of first conductivity type ions than the semiconductor substrate; and a second impurity region formed of a second conductivity type in the photodiode region of the semiconductor substrate.
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申请公布号 |
US7645652(B2) |
申请公布日期 |
2010.01.12 |
申请号 |
US20060507346 |
申请日期 |
2006.08.21 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
HYUK LIM KEUN |
分类号 |
H01L21/00;H01L21/331;H01L21/338 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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