发明名称 Verfahren zur Herstellung von Schottky-Kontakten
摘要 Method of producing metal-semiconductor contacts (Schottky contacts) with precisely defined and preferably relatively small areas by uniformly coating a semiconductor surface with a layer of chromium, coating a layer of aluminum in a pattern corresponding to the desired contacts onto the chromium layer and etching the uncoated chromium layer areas with hydrochloric acid having a concentration of at least about 1 percent until corresponding areas of the semiconductor surface are exposed. The so-formed plurality of contacts on a semiconductor sample can be divided into individual components each having at least one such contact. Connection wires or the like are attachable directly to the aluminum area by thermo-compression or ultra-sonic bonding.
申请公布号 DE2057204(A1) 申请公布日期 1972.06.08
申请号 DE19702057204 申请日期 1970.11.20
申请人 SIEMENS AG 发明人 KNIEPKAMP,HERMANN,DIPL.-PHYS.
分类号 H01L21/00;H01L23/482 主分类号 H01L21/00
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