发明名称 |
Verfahren zur Herstellung von Schottky-Kontakten |
摘要 |
Method of producing metal-semiconductor contacts (Schottky contacts) with precisely defined and preferably relatively small areas by uniformly coating a semiconductor surface with a layer of chromium, coating a layer of aluminum in a pattern corresponding to the desired contacts onto the chromium layer and etching the uncoated chromium layer areas with hydrochloric acid having a concentration of at least about 1 percent until corresponding areas of the semiconductor surface are exposed. The so-formed plurality of contacts on a semiconductor sample can be divided into individual components each having at least one such contact. Connection wires or the like are attachable directly to the aluminum area by thermo-compression or ultra-sonic bonding. |
申请公布号 |
DE2057204(A1) |
申请公布日期 |
1972.06.08 |
申请号 |
DE19702057204 |
申请日期 |
1970.11.20 |
申请人 |
SIEMENS AG |
发明人 |
KNIEPKAMP,HERMANN,DIPL.-PHYS. |
分类号 |
H01L21/00;H01L23/482 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|