ELECTROCHEMICAL POLISHING AND PLATING METHOD FOR MANUFACTURING OF THROUGH VIA AND BUMPS IN 3D SIP

摘要

PURPOSE: An electrochemical processing method of a through via and a bump of a three dimensional SiP is provided to simplify a manufacturing process by forming a bump using an electroless-plating method without a lithography process. CONSTITUTION: A though via is formed. A cupper plating layer is formed by applying a pulse-reverse pulse current to the via. The plating layer is planarized by electro-polishing. The copper on a planarized plating layer is electroless plated. The tin is electroless-plated on the cupper plating layer. The plated copper and tin layer is reflowed.