发明名称 |
CMOS TRANSISTOR AND THE METHOD FOR MANUFACTURING THE SAME |
摘要 |
A CMOS transistor and a method for manufacturing the same are disclosed. A semiconductor substrate having at least a PMOS transistor and an NMOS transistor is provided. The source/drain of the PMOS transistor comprises SiGe epitaxial layer. A carbon implantation process is performed to form a carbon-doped layer in the top portion of the source/drain of the PMOS transistor. A silicide layer is formed on the source/drain. A CESL is formed on the PMOS transistor and the NMOS transistor. The formation of the carbon-doped layer is capable of preventing Ge out-diffusion.
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申请公布号 |
US2010001317(A1) |
申请公布日期 |
2010.01.07 |
申请号 |
US20080168062 |
申请日期 |
2008.07.03 |
申请人 |
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发明人 |
CHEN YI-WEI;TSAI TENG-CHUN;HUANG CHIEN-CHUNG;CHEN JEI-MING;HSIAO TSAI-FU |
分类号 |
H01L21/8238;H01L27/092 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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