发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a technique capable of improving an anti-shock property of a solder joint. <P>SOLUTION: A semiconductor device has joint structures in which a joint layer 7 provided between an underlying conductive layer and a lead-free solder layer and substantially not containing sulfur and, and an alloy layer 9a provided between the joint layer and the lead-free solder layer containing elements of these layers are formed. Therein, the joint layer is a plated layer mainly containing nickel or nickel-phosphorus, and the solder layer is a bump 14 made of a zinc-alloy material. The underlying conductive layer is an electrode-pad 6 of a wiring board, the joint layer is a plated layer formed on the surface of the electrode pad, and the solder layer is a bump joined to the joint layer. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010004063(A) 申请公布日期 2010.01.07
申请号 JP20090188817 申请日期 2009.08.18
申请人 RENESAS TECHNOLOGY CORP 发明人 YAMAMOTO KENICHI;MORITA TOSHIAKI;YAMADA MUNEHIRO;KIMOTO RYOSUKE
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址