| 摘要 |
1281298 SiO 2 coating SIEMENS AG 1 July 1970 [2 July 1969] 31837/70 Heading C1A A layer of SiO 2 is produced on the surface of a semi-conductor plate by placing the plate on a base and heating it at a temperature of not more than 550‹ C. in the presence of O 2 , directing a jet of a mixture of SiH 4 and an inert gas towards the base, and effecting relative movement between the base and the jet. The gas mixture may contain up to 1% by vol. SiH 4 , preferably 0À5-0À8%. The inert gas may be N 2 or Ar, and the temperature 450-500‹ C The base may move in one direction and the jet in the transverse direction, e.g. at 1 cm./sec., and be directed perpendicular to the base. The semi-conductor may be monocrystalline Si, Ge or a III-V compound.
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