| 摘要 |
An object of the present invention is to provide a tin oxide target suitable for forming a transparent conductive film by a sputtering method, in particular, DC sputtering method, DC pulse sputtering method, AC sputtering method, and MF sputtering method. The present invention relates to a sputtering target for use in forming a transparent conductive film by a sputtering method, the sputtering target containing tin oxide as a main component and containing, as dopants, copper element and at least one element selected from the dopant group A consisting of niobium, tungsten, tantalum, bismuth, and molybdenum.
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