发明名称 |
METHOD FOR MANUFACTURING PHASE SHIFT MASK AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high-quality phase shift mask with high reliability, suppressing generation of haze on the surface without degrading control of pattern dimensions and a phase difference with higher accuracy. <P>SOLUTION: When a phase shifter layer 2 is processed by using a light-shielding film 3 as a hard mask, a mixture gas of SF<SB>6</SB>and He is used as a first gas for an etching gas in a step S4<SB>1</SB>, so as to subject the phase shifter layer 2 to dry etching; and in a step S4<SB>2</SB>, a mixture gas of CF<SB>4</SB>and He is used as a second gas for an etching gas to subject a S layer 1a to dry etching to remove the layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010002853(A) |
申请公布日期 |
2010.01.07 |
申请号 |
JP20080163554 |
申请日期 |
2008.06.23 |
申请人 |
FUJITSU MICROELECTRONICS LTD |
发明人 |
IIDA HITOSHI;ISHIWATARI NAOYUKI;HIRUMI JUNJI;IBARAKI TOSHIAKI |
分类号 |
G03F1/30;G03F1/32;G03F1/68;G03F1/80;H01L21/027 |
主分类号 |
G03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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