| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production process of silicon wafer which ensures high integrity of a wafer surface layer and exhibits the gettering function which is equivalent to or better than before in the vicinity of the wafer surface layer. Ž<P>SOLUTION: Using a rapid heating furnace, a silicon wafer is heat-treated for 10 second at 1,150°C under an atmosphere of ammonia or nitrogen gas in order to inject vacancies into the wafer, and then the wafer is heat-treated consecutively for 1 second at 1,150°C under an atmosphere of oxygen gas in order to inject interstitial silicon into high density vacancies or vacancy clusters thus causing pair annihilation. The wafer is quenched immediately thereafter at a rate of 50°C/second. Consequently, a silicon wafer having enhanced quality in the region of the wafer surface layer and exhibiting the gettering function which is equivalent to or better than before in the vicinity of the wafer surface layer is obtained. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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