| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition for liquid immersion exposure improved in mask shape reproducibility, pattern falling and exposure latitude and excellent in property of following an immersion liquid when applied to liquid immersion exposure, and to provide a pattern forming method using the same. <P>SOLUTION: The resist composition for liquid immersion exposure includes (A) a resin whose solubility to an alkaline developer is increased by the action of an acid, (B) a photoacid generator, and (C) a specific mixed solvent. The pattern forming method uses this resist composition. <P>COPYRIGHT: (C)2010,JPO&INPIT |
