| 摘要 |
PURPOSE: The semiconductor device manufacturing method easily eliminates residue from the entrance of the via hole under the trench. CONSTITUTION: The semiconductor device manufacturing method comprises the formation step of the insulating layer(22) and formation step of the sacrificing layer(24). The insulating layer is formed in order to have the via hole (via hole: 23A). The sacrificing layer is formed in the bottom surface and sidewall of the via hole. The semiconductor device manufacturing method more includes the formation step of the trench and decimation stage of the sacrificing layer. It partly etches the sacrificing layer and insulating layer and the trench is formed. The sacrificing layer is removed after the formation of inside of the insulating layer the trench from the via hole.
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