发明名称 PROCESSING METHOD AND REGENERATING METHOD OF SILICON FOR ELECTRONIC COMPONENT
摘要 PROBLEM TO BE SOLVED: To provide the processing method and the regenerating method of silicon for the electronic industry, in which chemical reactions of impurity metals and carbon with silicon are inhibited in a silicon processing step and silicon recovering and regenerating steps to reduce contamination of silicon by the metals and carbon. SOLUTION: The processing method of silicon for electronic components includes processing a silicon ingot or a silicon wafer, and the regenerating method of silicon includes recovering silicon from silicon sludge containing processing waste produced by the processing and regenerating it as silicon for the electronic industry. In the methods, a gas which controls oxidation-reduction potential is added to a silicon surface to be processed or to a solution containing silicon shavings. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010001181(A) 申请公布日期 2010.01.07
申请号 JP20080160956 申请日期 2008.06.19
申请人 NOMURA MICRO SCI CO LTD 发明人 YONEHARA TAKAHIRO;IIYAMA MASAMITSU;ABE TSUGI
分类号 C01B33/02 主分类号 C01B33/02
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