| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that has a MOS transistor 10 and an LDMOS 20, wherein impurities are prevented from being implanted in a semiconductor substrate 4 penetrating a second gate electrode 28 that the LDMOS 20 has and characteristics of the semiconductor device are prevented from varying without affecting the characteristics of the semiconductor device. SOLUTION: A mask film 30 is arranged on the surface of a gate electrode material 29 constituting the second gate electrode 28 that the LMOS 20 has, and then is patterned so that the mask 30 is left in a region where the second gate electrode 28 is scheduled to be formed. The second gate electrode 28 is formed by etching the gate electrode material 29 using the patterned mask film 30 as a mask. Successively, the impurities are ion-implanted in the semiconductor substrate 4 in a state where the mask film 30 is arranged on the surface of the second gate electrode 28. COPYRIGHT: (C)2010,JPO&INPIT
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