| 摘要 |
PROBLEM TO BE SOLVED: To prevent contamination of a wafer in a producing process and to facilitate dechucking of the wafer, by protecting a rear face of the silicon wafer in producing a semiconductor device using a vertical furnace. SOLUTION: A semiconductor element is formed on one face of a silicon substrate. The producing method of the semiconductor device includes steps of: forming an oxide film on the other face; forming a first film to cover the one face and the oxide film on the other face; patterning the first film, to form a mask pattern; forming an element isolation region on the one face; removing the first film, on the other face; forming a gate insulation film 28G, on the one face; forming a gate electrode 29G via the gate insulation film 28G, on the one face; forming source/drain regions 21c and 21d, on both sides of the gate electrode 29G to form a transistor; and forming a wiring layer above a semiconductor substrate, with the oxide film maintained on the other face, as it is. COPYRIGHT: (C)2010,JPO&INPIT |
