SILICON SINGLE CRYSTAL WAFER, PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL WAFER, AND METHOD FOR EVALUATING SILICON SINGLE CRYSTAL WAFER

摘要

Disclosed are a silicon single crystal wafer, which causes no deterioration in GOI even when the thickness of the gate oxide film is as thin as a few nanometer, a process for producing the silicon single crystal wafer, and an evaluation method that can evaluate the freedom from a deterioration in GOI in an easier manner than a TDDB method and the like.  The process for producing a silicon single crystal wafer is characterized by comprising at least a step of providing a silicon single crystal ingot, a step of slicing the silicon single crystal ingot to prepare a plurality of slice substrates, a processing step of subjecting the plurality of slice substrates to at least one processing selected from lapping, etching, and polishing to form a plurality of substrates, a step of taking out at least one substrate from the plurality of substrates, a step of measuring the surface roughness of the substrate taken out in the taking-out step by AFM and determining the amplitude (intensity) of a frequency range corresponding to a wavelength of 20 to 50 nm to determine whether the substrate is acceptable or unacceptable, and a step of transferring the substrate to a next step when the substrate has been determined as acceptable, or reprocessing the substrate when the substrate has been determined as unacceptable.