发明名称 |
METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL |
摘要 |
A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal layer disposed on, and in contact with the second metal layer, the second metal layer being stiffer than the third metal layer. An additional metal is included wherein the dielectric layer is disposed between the metal structure and the additional metal. |
申请公布号 |
EP2140481(A1) |
申请公布日期 |
2010.01.06 |
申请号 |
EP20080731926 |
申请日期 |
2008.03.12 |
申请人 |
RAYTHEON COMPANY |
发明人 |
WHELAN, COLIN, S.;LILES, BARRY, J. |
分类号 |
H01L21/02;H01L23/532 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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