| 摘要 |
<p>PURPOSE: A saddle fin transistor and a method for manufacturing the same is provided to prevent a bridge between a gate polysilicon and PC(Landing Plug Contact) by forming a bridge barrier layer on a place for recess gate. CONSTITUTION: A first recess is formed at a gate region, and a bridge shield(123) is formed on the sidewall of the first recess. A second recess is formed by etching the bottom of a first recess. A third recess is formed by etching a second recess for an element isolation region(114). A gate(130) filling in a second recess and a third recess is formed. The bridge barrier is formed by the nitride film.</p> |
