| 摘要 |
A method of dividing a wafer having a plurality of dividing lines formed in a lattice pattern on the front surface, into individual chips along the dividing lines, the method comprising: a deteriorated layer forming step for forming a deteriorated layer in the inside of the wafer by applying a laser beam capable of passing through the wafer along the dividing lines; a wafer supporting step for putting one surface side of the wafer on a support tape which is mounted on an annular frame and shrinks by an external stimulus; a wafer-dividing step for dividing the wafer along the dividing lines where the deteriorated layer has been formed by exerting external force to the wafer which has been put on the support tape; and a chip spacing formation step for shrinking the shrink area between the inner periphery of the annular frame and the area, to which the wafer is affixed, in the support tape affixed to the divided wafer, by exerting an external stimulus to the shrink area. |
