| 摘要 |
PURPOSE: A semiconductor device and method for fabricating the same are provided to reduce CD of the recess by evaporating the insulating layer by the laminating structure of the insulating layer and polysilicon layer in the recess region. CONSTITUTION: The element isolation film(210) defining the active area(205) is formed on the semiconductor substrate(200). The pad oxide film pattern and pad nitride film pattern are formed on the semiconductor substrate. The recess region is formed by etching the active area of the semiconductor substrate. The recess is formed by evaporating the gate insulating layer(237) in the whole surface of the semiconductor substrate. The polysilicon layer(240a) is formed in upper part. The metal layer(240b) and hard mask layer(240c) are formed in the polysilicon layer. The gate pattern(240) is formed by successively etching the hard mask layer, and the metal layer and polysilicon layer.
|
