| 摘要 |
<p>PURPOSE: A method for forming fine pattern of semiconductor device is provided to form the space pattern of the uniform thickness on the sidewall of photoresist pattern by reducing the damage potential of the photoresist pattern. CONSTITUTION: The photoresist film including the etched layer(113) and silicon-containing polymer is formed in the front side of the etched layer(111) of substrate. The photoresist film is selectively exposed to by using the exposure mask. The photoresist film region which is exposed to by injecting the silylating agent into the front side of the photoresist film is sylilated. The oxygen plasma etching process is carried out on the photoresist film including the sylilated domain(121). The spacer(125) is formed in the sidewall of the photoresist pattern(115-1) by the anisotropic dry etching process. The space pattern is formed on the top of the lower part etched layer. The etched pattern is formed by patterning the etched layer.</p> |
