| 摘要 |
<p>PURPOSE: A method of forming a micro pattern for a semiconductor device is provided to form a exposure region on a plurality of photoresist films through one time exposure process by forming an organic film between the photoresist films. CONSTITUTION: In a device, an etch target film(202) and a hard mask film(204) are successively formed on a semiconductor substrate(200). A first photoresist film(208), an organic film(210), and a second photoresist film(214) are successively formed on the hard mask film. A first exposure region is formed on the second photoresist film through an exposure process. A second exposure region is formed on the first photoresist film through the exposure process. The wave length of a light radiated on the first photoresist film and the wave length of a light radiated on the second photoresist film are reversed with each other.</p> |
