PHASE SHIFT MASK BLANK, PHASE SHIFT MASK, AND METHOD OF MANUFACTURING PHASE SHIFT MASK BLANK

摘要

PURPOSE: A phase shift mask is provided to avoid the collapsing of optical proximity correction patterns and to satisfy demands of pattern accuracy by making a film thickness of a phase shift mask thin. CONSTITUTION: A phase shift mask blank is a disk of a phase shift mask which is used after a semiconductor design rule 32 nm node and is exposed by the ArF excimer laser light. The phase shift mask blank has a shift layer(2) on a light-transmissive substrate(3) and a light-blocking layer(1) on the phase shift layer. The phase shift layer has 9-30 % transmittance for the wavelength of an ArF excimer laser light and 150-180 ° phase difference.