发明名称 |
Phase change memory cells delineated by regions of modified film resistivity |
摘要 |
A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by the conductive encapsulating layer. Electrical isolation between adjacent PCM cells is provided by high electrical resistance regions which were formed by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof.
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申请公布号 |
US7642549(B2) |
申请公布日期 |
2010.01.05 |
申请号 |
US20090407068 |
申请日期 |
2009.03.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ARNOLD JOHN CHRISTOPHER;CARMICHAEL TRICIA BREEN |
分类号 |
H01L29/08;H01L29/18 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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