发明名称 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS OPTICAL PICKUP
摘要 A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer.
申请公布号 US2009323750(A1) 申请公布日期 2009.12.31
申请号 US20090492808 申请日期 2009.06.26
申请人 SANYO ELECTRIC CO., LTD. 发明人 INOUE DAIJIRO;OOTA KIYOSHI;MURAYAMA YOSHIKI;HIROYAMA RYOJI;OHBO HIROKI;TOKUNAGA SEIICHI
分类号 H01S5/00;H01L21/00;H01S5/028 主分类号 H01S5/00
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